Color filter pattern and manufacturing method thereof

ABSTRACT

A color filter pattern including a plurality of color filters arranged in a pattern and the manufacturing method thereof are provided. By performing at least one two-stage exposure process to a color filter layer, the plurality of color filters are formed with a sharp profile.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of and claims the prioritybenefit of U.S. application Ser. No. 14/611,858, filed on Feb. 2, 2015,now allowed. The entirety of the above-mentioned patent application ishereby incorporated by reference herein and made a part of thisspecification.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a filter and themanufacturing method thereof, in particular, to a color filter patternand the manufacturing method thereof.

2. Description of Related Art

The color filters included in most flat panel displays and opticalelements generally have color patterns of three primary colors, red (R),green (G) and blue (B). Photolithography has been widely used forproducing large-sized, high-resolution color filters, and the colorfilters may be produced by applying a colored photocurable composition(photoresist composition) onto a support, drying the coated film, andexposing and developing the dried coated film with a pattern.

However, as the size of the pixels or pattern keeps decreasing, itbecomes more challenging to attain the positional accuracy of theobtained pattern for the color filters. Also, because of the bottomreflected light during the exposure process, taper profiles are commonlyobserved at the lower portions of the color filters (negative resistlayer).

SUMMARY OF THE INVENTION

The embodiment of the present invention provides a green color filterpattern comprising a plurality of green color filters on a substrate.Each of the plurality of green color filters has a substantiallyvertical sidewall and a slant jut located at the bottom of the sidewalland protruding outwards from the sidewall, and a height of the jut isless than fifth of a height of each of the plurality of green colorfilters.

The embodiment of the present invention provides a color filter pattern,comprising a plurality of green color filters, a plurality of blue colorfilters and a plurality of red color filters disposed on a substrate.Each of the plurality of green color filters has a substantiallyvertical sidewall and a slant jut located at the bottom of the sidewalland protruding outwards from the sidewall. A height of the jut is lessthan a height of each of the plurality of green color filters. Theplurality of blue color filters disposed on the substrate is locatedbeside the plurality of green color filters. The plurality of red colorfilters disposed on the substrate is located beside the plurality ofgreen color filters and beside the plurality of blue color filters.

The embodiment of the present invention provides a method of forming agreen color filter pattern. A green color filter layer is formed on asubstrate and a first two-stage exposure process is performed to thegreen color filter layer. The two-stage exposure process comprisesperforming a first exposure process with a first light at a firstwavelength to expose a portion of the green color filter layer andperforming a second exposure process with a second light at a secondwavelength to the exposed portion of the green color filter layer. Thefirst wavelength of the first light is shorter than the secondwavelength of the second light. Then, unexposed portions of the greencolor filter layer are removed to form the green color filter pattern.

The embodiment of the present invention provides a method of forming aphotoresist pattern. A photoresist layer is formed on a substrate and afirst two-stage exposure process is performed to the photoresist layer.The two-stage exposure process comprises performing a first exposureprocess with a first light at a first wavelength to expose a portion ofthe photoresist layer and performing a second exposure process with asecond light at a second wavelength to the exposed portion of thephotoresist layer. The first wavelength of the first light is shorterthan the second wavelength of the second light. Then, unexposed portionsof the photoresist layer are removed to form the photoresist pattern.

In order to make the aforementioned and other features and advantages ofthe invention more comprehensible, several embodiments accompanied withfigures are described in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

FIG. 1A-1C are schematic cross-sectional views of the process steps forforming a color filter.

FIG. 2A-FIG. 2D illustrate the schematic top views of the manufacturingprocess steps of color filters according to one embodiment of thepresent invention.

FIG. 3 is a flow chart of the manufacturing process steps of colorfilters according to one embodiment of the present invention.

FIG. 4A-FIG. 4D illustrate the schematic top views of the manufacturingprocess steps of color filters according to one embodiment of thepresent invention.

FIG. 5 is a flow chart of the manufacturing process steps of colorfilters according to one embodiment of the present invention.

FIG. 6 is a flow chart of the manufacturing process steps of colorfilters according to another embodiment of the present invention.

FIG. 7 is a flow chart of the manufacturing process steps of colorfilters according to another embodiment of the present invention.

FIG. 8 shows the top view images of the color filter layers exposed bydifferent exposure processes.

FIG. 9 shows the cross-sectional view images of the color filter layersexposed by different exposure processes.

DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the present preferredembodiments of the invention, examples of which are illustrated in theaccompanying drawings. Wherever possible, the same reference numbers areused in the drawings and the description to refer to the same or likeparts. In the following embodiment, a circuit trace part of a portabledevice is described as an example for illustration. It is not intendedto limit the method or the part structure by the exemplary embodimentsdescribed herein.

FIGS. 1A-1C are schematic cross-sectional views of the process steps forforming a color filter. As shown in FIG. 1A, a photoresist layer 200 isformed on a substrate 100. The substrate 100 may be a transparentsubstrate or an opaque substrate, for example. The transparent substratemay be a glass substrate, for example. The opaque substrate may be asilicon wafer or a semiconductor compound substrate, for example. Thephotoresist layer 200 may be a color filter layer formed from aphotoresist layer dispersed with selected pigments, for example. Thecolor filter layer may be a green color filter layer, a blue colorfilter layer or a red color filter layer. Then, after a photo-mask 300is provided and placed over the photoresist layer 200, a first exposurestep L1 with the light of a first wavelength is performed to thephotoresist layer 200, and the photoresist layer 200 is partiallyexposed. The exposed portion 200 a of the photoresist layer 200 isslightly cross-linked. For example, the light of the first wavelengthmay be the deep ultraviolet (DUV) light at 248 nm or at 193 nm. The DUVlight at 248 nm may be provided by a KrF excimer laser, or the DUV at193 nm may be provided by an ArF excimer laser. The DUV lithography isable to pattern features sizes as small as 32 nm and below. When thedeep ultraviolet (DUV) light at 248 nm is used in the first exposurestep, as the DUV light can penetrate deeper into the photoresist layer200 with less reflection from the bottom layer (bottom reflection), theexposed portion 200 a is slightly cross-linked with upright and straightsidewalls of the exposed portion 200 a.

In FIG. 1B, the photo-mask 300 is remained over the photoresist layer200, a second exposure step L2 with the light of a second wavelength isperformed to the photoresist layer 200, and the photoresist layer 200 ispartially exposed again. As the photo-mask 300 remains at the sameposition, the exposed portion 200 a of the photoresist layer 200 isexposed again during the second exposure step L2 to become the exposedportion 200 b, and the exposed portion 200 b is firmly and fullycross-linked. Then, the unexposed portions of the photoresist layer 200are removed during the development step.

Afterwards, in FIG. 1C, after removing the unexposed portions of thephotoresist layer 200, the exposed portion 200 b is remained. Theremained exposed portion 200 b in fact is a color filter with apredetermined pattern. Although only one exposed portion 200 b is shownherein for illustration purposes, it is understood that more than oneportions 200 b are obtained and the portions 200 b are color filtersarranged in a pattern as shown in later figures. The two continuousexposure steps as shown in FIG. 1A and 1B may be considered as oneexposure process performed in two-stage (i.e., a two-stage exposureprocess) to form color filters in a pattern (color filter pattern) fromthe photoresist layer (color filter layer).

For example, the light of the second wavelength may be the ultraviolet(UV) light at 365 nm (“i-line”), 405 nm (“h-line”) or 436 nm (“g-line”).The UV light may be provided by a mercury lamp or UV lamp. When theultraviolet (UV) light at 365 nm (“i-line”) is used in the secondexposure step, as the partially cross-linked exposed portion 200 a mayblock DUV light to a certain extent, the bottom reflection of the UVlight is reduced and the phenomenon of the tapper profile is alleviated.By using the two-stage exposure process, the resolution of the colorfilter pattern is enhanced. In principle, the first wavelength isshorter than the second wavelength, and the energy level for the lightof the second wavelength (e. g. DUV light at 248 nm or 193 nm) may belower than the energy level of the light of the first wavelength (e.g.,i-line at 365 nm).

As shown in FIG. 1C, although the bottom reflection is lessened, thereis still small bottom reflection of the light. Owing to the small bottomreflection of the light, the substantially upright and vertical sidewall201 of the remained exposed portion 200 b has a slant jut 202 located atthe bottom of the sidewall and protruding outwards from the sidewall201. A height d of the jut 202 is less than fifth of the height h of theremained exposed portion 200 b. Preferably, the height d of the jut 202is less than tenth of the height h of the remained exposed portion 200b. The angle θ between the slat surface 203 of the slant jut 202 and thesubstrate 100 is less than 30 degrees, for example.

FIG. 2A-FIG. 2D illustrate the schematic top views of the manufacturingprocess steps of color filters according to one embodiment of thepresent invention.

In FIG. 2A, a photoresist layer 210 is provided. The photoresist layer210 may be formed on a substrate 100 by spin coating, for example. Inthis embodiment, the photoresist layer 210 is a green color filterlayer.

In FIG. 2B, a two-stage exposure process is performed to the photoresistlayer 210 and exposed portions 210 b of the photoresist layer 210 areformed. Similar to the two continuous exposure process steps describedin FIG. 1A-1B, the two-stage exposure process includes performing afirst exposure step at 248 nm and then a second exposure step at 365 nm.Hence, the photoresist layer (green color filter layer) 210 is exposedtwice during the two-stage exposure process to form the exposed portions210 b. The exposed portions 210 b are green color filters and the greencolor filters 210 b are arranged in a checker pattern. That is, thegreen color filters 210 b arranged in a specific pattern consist of thegreen color filter pattern. Then, a development process is performed andthe unexposed portions of the photoresist layer 210 are removed to formopenings S1 by the green color filters 210 b.

In FIG. 2C, another photoresist layer 220 is formed over the green colorfilters 210 b and filling into the openings S1 (FIG. 2B) by spincoating, for example. The photoresist layer 220 is a blue color filterlayer, for example. Another exposure process is performed to thephotoresist layer 220 with the light of a wavelength of 365 nm, so thatthe photoresist layer 220 is partially exposed to form the exposedportions 220 c. Herein, the photoresist layer 220 is only exposed onceduring the exposure process to form the exposed portions 220 c, and theexposed portions 220 c are blue color filters formed within the openingsS1 are arranged in a tartan check pattern. Herein, in addition to thepattern of the photo-mask used in the exposure process, the pattern orthe shape of the blue color filters 220 c is further defined through theformation of the openings S1 and the green color filters 210 b in theprevious process. That is, the two-stage exposure process attributed tohigher resolution of color filter pattern may not be needed as the to-beformed blue color filters 220C are fully restrained by the previouslyformed green color filters 210 b. Then, the unexposed portions of thephotoresist layer 220 are removed during the development step to formopenings S2 by the green color filters 210 b and the blue color filters220 c.

Later, in FIG. 2D, another photoresist layer 230 is formed over thegreen color filters 210 b, the blue color filters 220 c and filling intothe openings S2 (FIG. 2C) by spin coating, for example. The photoresistlayer 230 is a red color filter layer, for example. Another exposureprocess is performed to the photoresist layer 230 with the light of awavelength of 365 nm, so that the photoresist layer 230 is partiallyexposed to form the exposed portions 230 c. Herein, the photoresistlayer 230 is only exposed once during the exposure process to form theexposed portions 230 c, and the exposed portions 230 c are red colorfilters formed within the openings S2 and the red color filters 230 care arranged in a tartan check pattern. Herein, in addition to thepattern of the photo-mask used in the exposure process, the pattern orthe shape of the red color filters 230 c is further defined through theformation of the openings S2, the blue color filters 220 c and the greencolor filters 210 b in the previous process. That is, the two-stageexposure process attributed to higher resolution of color filter patternmay not be needed as the to be formed red color filters 230 c are fullyrestrained by the previously formed green color filters 210 b and bluecolor filters 220 c. Then, the unexposed portions of the photoresistlayer 230 are removed during the development step.

FIG. 3 is a flow chart of the manufacturing process steps of colorfilters according to one embodiment of the present invention. The layoutof the pattern of the green, blue and red color filters may refer toFIGS. 2A-2D.

As described in Step S302 of FIG. 3, a green color filter layer iscoated. Then, in Step S304, the green color filter layer is exposedtwice by the two-stage exposure process of a first exposure step usingthe DUV light at 248 nm and then a second exposure step using i-linelight at 365 nm. In Step 306, the development process is performed toremove the unexposed portions of the green color filter layer, and thena baking (post-baking) process is performed, so that green color filtersin a specific pattern are obtained. In Step S308 of FIG. 3, a blue colorfilter layer is coated over the green color filters. Then, in Step S310,the blue color filter layer is exposed by performing an exposure processusing i-line light at 365 nm. In Step 312, the development process isperformed to remove the unexposed portions of the blue color filterlayer, and then a baking (post-baking) process is performed, so thatblue color filters in a specific pattern are obtained. In Step S314, ared color filter layer is coated over the green color filters and theblue color filters. Then, in Step S316, the red color filter layer isexposed by performing an exposure process using i-line light at 365 nm.In Step 318, the development process is performed to remove theunexposed portions of the red color filter layer, and then a baking(post-baking) process is performed, so that red color filters in aspecific pattern are obtained.

FIG. 4A-FIG. 4D illustrate the schematic top views of the manufacturingprocess steps of color filters according to another embodiment of thepresent invention.

In FIG. 4A, a photoresist layer 220 is provided. The photoresist layer220 may be formed on a substrate 100 by spin coating, for example. Inthis embodiment, the photoresist layer 220 is a blue color filter layer.

In FIG. 4B, a two-stage exposure process is performed to the photoresistlayer 220 and exposed portions 220 b of the photoresist layer 220 areformed. Similar to the two continuous exposure process steps describedin FIG. 1A-1B, the two-stage exposure process includes performing afirst exposure step at 248 nm and then a second exposure step at 365 nm.Hence, the photoresist layer (blue color filter layer) 220 is exposedtwice during the two-stage exposure process to form the exposed portions220 b. The exposed portions 220 b are blue color filters and the bluefloor filters 220 b are arranged in a tartan check pattern. Then, adevelopment process is performed and the unexposed portions of thephotoresist layer 220 are removed to form the opening S1 surrounding theblue color filters 220 b.

In FIG. 4C, another photoresist layer 210 is formed over the blue colorfilters 220 b and filling into the opening S1 (FIG. 4B) by spin coating,for example. The photoresist layer 210 is a green color filter layer,for example. Another two-stage exposure process is performed to thephotoresist layer 210 and the exposed portions 210 b of the photoresistlayer 210 are formed. Similar to the two continuous exposure processsteps described in FIGS. 1A-1B, the two-stage exposure process includesperforming a first exposure step at 248 nm and then a second exposurestep at 365 nm. Hence, the photoresist layer (green color filter layer)210 is exposed twice during the two-stage exposure process to form theexposed portions 210 b. The exposed portions 210 b are green colorfilters formed within the opening S1 and the green color filters arearranged in a checker pattern. Herein, in addition to the pattern of thephoto-mask used in the exposure process, the pattern or the shape of thegreen color filters 210 b is further defined through the formation ofthe blue color filters 220 b and the opening S1 in the previous process.However, because the to-be formed green color filters 210 b is onlypartially restrained by the previously formed blue color filters 220 b,the two-stage exposure process attributed to higher resolution of colorfilter pattern may still be needed. Then, the unexposed portions of thephotoresist layer 210 are removed during the development step to formopenings S2 by the green color filters 210 b and the blue color filters220 b.

Later, in FIG. 4D, another photoresist layer 230 is formed over thegreen color filters 210 b, the blue color filters 220 b and filling intothe openings S2 (FIG. 4C) by spin coating, for example. The photoresistlayer 230 is a red color filter layer, for example. Another exposureprocess is performed to the photoresist layer 230 with the light of awavelength of 365 nm, so that the photoresist layer 230 is partiallyexposed to form the exposed portions 230 c. Herein, the photoresistlayer 230 is only exposed once during the exposure process to form theexposed portions 230 c, and the exposed portions 230 c are red colorfilters formed within the openings S2 and the red color filters 230 care arranged in a tartan check pattern. Herein, in addition to thepattern of the photo-mask used in the exposure process, the pattern orthe shape of the red color filters 230 c is further defined through theformation of the openings S2, the blue color filters 220 b and the greencolor filters 210 b in the previous process. That is, the two-stageexposure process attributed to higher resolution of color filter patternmay not be needed as the to be formed red color filters 230 c are fullyrestrained by the previously formed green color filters 210 b and bluecolor filters 220 b. Then, the unexposed portions of the photoresistlayer 230 are removed during the development step.

FIG. 5 is a flow chart of the manufacturing process steps of colorfilters according to one embodiment of the present invention. The layoutof the pattern of the blue, green and red color filters may refer toFIGS. 4A-4D.

As described in Step S502 of FIG. 5, a blue color filter layer iscoated. Then, in Step S504, the blue color filter layer is exposed twiceby the two-stage exposure process of a first exposure step using the DUVlight at 248 nm and then a second exposure step using i-line light at365 nm. In Step 506, the development process is performed to remove theunexposed portions of the blue color filter layer, and then a baking(post-baking) process is performed, so that blue color filters in aspecific pattern are obtained. In Step S508 of FIG. 5, a green colorfilter layer is coated over the blue color filters. Then, in Step S510,the green color filter layer is exposed twice by the two-stage exposureprocess of a first exposure step using the DUV light at 248 nm and thena second exposure step using i-line light at 365 nm. In Step 512, thedevelopment process is performed to remove the unexposed portions of thegreen color filter layer, and then a baking (post-baking) process isperformed, so that green color filters in a specific pattern areobtained. In Step S514, a red color filter layer is coated over thegreen color filters and the blue color filters. Then, in Step S516, thered color filter layer is exposed by performing an exposure processusing i-line light at 365 nm. In Step 518, the development process isperformed to remove the unexposed portions of the red color filterlayer, and then a baking (post-baking) process is performed, so that redcolor filters in a specific pattern are obtained.

In the above embodiments, depending on the pattern design of the colorfilters and the required resolution for the pattern, the two-stageexposure process may be used to form the color filters of higherresolution.

In some embodiments of the present invention, the photoresist layers(color filter layers) of various grades may be used in combination. Itis known the photoresist layer of higher resolution may be moreexpensive. By using the two-stage exposure process and the photoresistlayers (color filter layers) of different levels of resolution, thecolor filters of higher resolution can be formed at a lower cost.

FIG. 6 is a flow chart of the manufacturing process steps of colorfilters according to one embodiment of the present invention. The layoutof the pattern of the green, blue and red color filters may refer toFIGS. 2A-2D.

As described in Step S602 of FIG. 6, a mid-resolution green color filterlayer is coated. In this embodiment, the mid-resolution green colorfilter layer is a 5000L green color filter layer. Then, in Step S604,the mid-resolution green color filter layer is exposed twice by thetwo-stage exposure process of a first exposure step using the DUV lightat 248 nm and then a second exposure step using i-line light at 365 nm.In Step 606, the development process is performed to remove theunexposed portions of the mid-resolution green color filter layer, andthen a baking (post-baking) process is performed, so that green colorfilters in a specific pattern are obtained. In Step S608, alow-resolution blue color filter layer is coated over the green colorfilters. In this embodiment, the low-resolution blue color filter layeris a 3000L blue color filter layer. Then, in Step S610, thelow-resolution blue color filter layer is exposed by performing anexposure process using i-line light at 365 nm. In Step 612, thedevelopment process is performed to remove the unexposed portions of thelow-resolution blue color filter layer, and then a baking (post-baking)process is performed, so that blue color filters in a specific patternare obtained. In Step S614, a low-resolution red color filter layer iscoated over the green color filters and the blue color filters. In thisembodiment, the low-resolution red color filter layer is a 3000L redcolor filter layer. Then, in Step S616, the low-resolution red colorfilter layer is exposed by performing an exposure process using i-linelight at 365 nm. In Step 618, the development process is performed toremove the unexposed portions of the red color filter layer, and then abaking (post-baking) process is performed, so that red color filters ina specific pattern are obtained.

In this embodiment, in reference to FIGS. 2A-2D, since the location(s)of the to-be-formed blue color filters 220 c or be to-be-formed redcolor filters 230 c are enclosed by the previously formed green colorfilters 210 b, the photoresist layers of lower resolution (e.g., 3000L)are used for the blue or red color filter layer and the two-stageexposure process attributed to higher resolution of color filter patternis not performed.

FIG. 7 is a flow chart of the manufacturing process steps of colorfilters according to one embodiment of the present invention. The layoutof the pattern of the green, blue and red color filters may refer toFIGS. 2A-2D.

As described in Step S702 of FIG. 7, a high-resolution green colorfilter layer is coated. In this embodiment, the high-resolution greencolor filter layer is a 6000L green color filter layer. Then, in StepS704, the high-resolution green color filter layer is exposed twice bythe two-stage exposure process of a first exposure step using the DUVlight at 248 nm and then a second exposure step using i-line light at365 nm. In Step 706, the development process is performed to remove theunexposed portions of the high-resolution green color filter layer, andthen a baking (post-baking) process is performed, so that green colorfilters in a specific pattern are obtained. In Step S708, amid-resolution blue color filter layer is coated over the green colorfilters. In this embodiment, the mid-resolution blue color filter layeris a 5000L blue color filter layer. Then, in Step S710, themid-resolution blue color filter layer is exposed by performing anexposure process using i-line light at 365 nm. In Step 712, thedevelopment process is performed to remove the unexposed portions of themid-resolution blue color filter layer, and then a baking (post-baking)process is performed, so that blue color filters in a specific patternare obtained. In Step S714, a mid-resolution red color filter layer iscoated over the green color filters and the blue color filters. In thisembodiment, the mid-resolution red color filter layer is a 5000L redcolor filter layer. Then, in Step S716, the mid-resolution red colorfilter layer is exposed by performing an exposure process using i-linelight at 365 nm. In Step 718, the development process is performed toremove the unexposed portions of the mid-resolution red color filterlayer, and then a baking (post-baking) process is performed, so that redcolor filters in a specific pattern are obtained.

In this embodiment, in reference to FIGS. 2A-2D, since the location(s)of the to-be-formed blue color filters 220 c or be to-be-formed redcolor filters 230 c are enclosed by the previously formed green colorfilters 210 b, the photoresist layers of lower resolution (e.g., 5000L)are used for the blue or red color filter layer and the two-stageexposure process attributed to higher resolution of color filter patternis not performed.

By using the photoresist layer of a higher resolution and the two-stageexposure process as the first exposure process, the obtained photoresistpattern (e.g., green color filters) has a better resolution and suchphotoresist pattern further limits the locations of the subsequentlyformed color filters (e.g., blue or red color filters).

It is known the photoresist layer of higher resolution may be moreexpensive. By using the two-stage exposure process capable of achievinghigher resolution, the photoresist layer (color filter layer) of a lowerresolution may be used for the subsequently formed color filterlayer(s). Compared with the production costs of using the color filterlayers of the same levels of resolution, the products can bemanufactured by using the two-stage exposure process with color filterlayers of different levels of resolution according to the embodiments ofthe present invention at lower production costs, and the results areshown in Table 1.

TABLE 1 Resolution Cost down level Forming sequence Green Blue Red (%)3000 L blue→green→red 3000 L 3000 L 3000 L 16% 5000 L green→blue→red5000 L 3000 L 3000 L 24% 6000 L green→blue→red 6000 L 5000 L 5000 L 24%

Using the mid-resolution (5000L) color filter layers as the testsamples, compared to the 5000L green color filter layer exposed by onlyone exposure step using i-line light at 365 nm having a depth of focus(DOF) of 0.8 microns, the 5000L green color filter layer exposed by thetwo-stage exposure process of a first exposure step using the DUV lightat 248 nm and then a second exposure step using i-line light at 365 nmhas a larger DOF (1.2 microns). As shown in FIGS. 8 & 9, the patternprofile of the 5000L green color filter layer exposed by the two-stageexposure process (DUV+i-line exposure, right part) is better and moreclearly defined than that of the 5000L green color filter layer exposedby only i-line light at 365 nm (i-line exposure, left part). From thecross-sectional views of FIG. 9, the sidewall of the color filterexposed by only i-line light at 365 nm (i-line exposure, left part) isslanted, while the sidewall of the color filter layer exposed by thetwo-stage exposure process (DUV+i-line exposure, right part) is almostupright.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims and their equivalents.

What is claimed is:
 1. A green color filter pattern, comprising: aplurality of green color filters on a substrate, wherein each of theplurality of green color filters has a substantially vertical sidewalland a slant jut located at the bottom of the sidewall and protrudingoutwards from the sidewall, and a height of the jut is less than fifthof a height of each of the plurality of green color filters.
 2. Thegreen color filter pattern of claim 1, wherein the height of the jut isless than tenth of the height of each of the plurality of green colorfilters.
 3. The green color filter pattern of claim 1, wherein an anglebetween a slat surface of the jut and the substrate is less than 30degrees.
 4. The green color filter pattern of claim 1, wherein theplurality of green color filters is arranged in a checker pattern.
 5. Acolor filter pattern, comprising: a plurality of green color filters ona substrate, wherein each of the plurality of green color filters has asubstantially vertical sidewall and a slant jut located at the bottom ofthe sidewall and protruding outwards from the sidewall, wherein a heightof the jut is less than a height of each of the plurality of green colorfilters; a plurality of blue color filters, disposed on the substrateand located beside the plurality of green color filters; and a pluralityof red color filters, disposed on the substrate and located beside theplurality of green color filters and beside the plurality of blue colorfilters.
 6. The color filter pattern of claim 5, wherein the height ofthe jut is less than fifth of the height of each of the plurality ofgreen color filters.
 7. The color filter pattern of claim 5, wherein theheight of the jut is less than tenth of the height of each of theplurality of green color filters.
 8. The color filter pattern of claim5, wherein an angle sandwiched between a slant surface of the slant jutand the substrate is less than 30 degrees.
 9. The color filter patternof claim 5, wherein the plurality of green color filters is arranged ina checker pattern.
 10. The color filter pattern of claim 9, wherein theplurality of blue color filters is arranged in a tartan check patternand arranged among the checker pattern of the plurality of the greencolor filters, wherein at least one side of each of the plurality ofblue color filters is in contact with at least one side of each of theplurality of green color filters.
 11. The color filter pattern of claim10, wherein the plurality of red color filters is arranged in a tartancheck pattern and arranged among the tartan check pattern of theplurality of the blue color filters, wherein at least three sides ofeach of the plurality of red color filters are in contact with at leastthree sides of each of the plurality of blue color filters.
 12. Thecolor filter pattern of claim 9, wherein the plurality of blue redfilters is arranged in a tartan check pattern and arranged among thechecker pattern of the plurality of the green color filters, wherein atleast one side of each of the plurality of red color filters is incontact with at least one side of each of the plurality of green colorfilters.
 13. The color filter pattern of claim 12, wherein the pluralityof blue color filters is arranged in a tartan check pattern and arrangedamong the tartan check pattern of the plurality of the red colorfilters, wherein at least three sides of each of the plurality of bluecolor filters are in contact with at least three sides of each of theplurality of red color filters.